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PNP Silicon AF Transistors
High current gain q High collector current q Low collector-emitter saturation voltage q Complementary types: BC 635, BC 637, BC 639 (NPN)
q
BC 636 ... BC 640
2 1
3
Type BC 636 BC 638 BC 640
Marking -
Ordering Code Q68000-A3365 Q68000-A3366 Q68000-A3367
Pin Configuration 1 2 3 E C B
Package1) TO-92
If desired, selected transistors, type BC 6 5 5 -10 (hFE = 63 ... 160), or BC 6 5 5 -16 (hFE = 100 ... 250) are available. Ordering codes upon request.
1)
For detailed information see chapter Package Outlines.
Semiconductor Group
1
5.91
BC 636 ... BC 640
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Junction temperature Storage temperature range Thermal Resistance Junction - ambient1) Junction - case2) Rth JA Rth JC

Symbol VCE0 VCB0 VEB0 IC ICM IB IBM Tj Tstg
Values BC 636 45 45
Unit BC 638 60 60 5 1 1.5 100 200 0.8 (1) 150 - 65 ... + 150 W C mA A BC 640 80 100 V
Total power dissipation, TC = 90 C1) Ptot
156 55
K/W
1)
2)
If the transistors with max. 4 mm lead length are fixed on PCBs with a min. 10 mm x 10 mm large copper area for the collector terminal, Rth JA = 125 K/W and thus Ptot max = 1 W at TA = 25 C. Mounted on Al heat sink 15 mm x 25 mm x 0.5 mm.
Semiconductor Group
2
BC 636 ... BC 640
Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 10 mA BC 636 BC 638 BC 640 Collector-base breakdown voltage IC = 100 A BC 636 BC 638 BC 640 Emitter-base breakdown voltage IE = 10 A Collector cutoff current VCB = 30 V VCB = 30 V, TA = 150 C Emitter cutoff current VEB = 4 V DC current gain IC = 5 mA; VCE = 2 V IC = 150 mA; VCE = 2 V1) IC = 500 mA; VCE = 2 V1) Collector-emitter saturation voltage1) IC = 500 mA; IB = 50 mA Base-emitter voltage1) IC = 500 mA; VCE = 2 V AC characteristics Transition frequency IC = 50 mA, VCE = 10 V, f = 20 MHz fT - 100 - MHz V(BR)EB0 ICB0 - - IEB0 hFE 25 40 25 VCEsat VBE - - - - - - - - 250 - 500 1 mV V - - - - 100 20 100 nA
A
Values typ. max.
Unit
V(BR)CE0 45 60 80 V(BR)CB0 45 60 100 5 - - - - - - - - - - - - - -
V
nA -
1)
Pulse test: t 300 s, D 2 %.
Semiconductor Group
3
BC 636 ... BC 640
Total power dissipation Ptot = f (TA; TC)
Collector cutoff current ICB0 = f (TA) VCB = 30 V
Permissible pulse load RthJA = f (tp)
Collector current IC = f (VBE) VCE = 2 V
Semiconductor Group
4
BC 636 ... BC 640
DC current gain hFE = f (IC) VCE = 2 V
Collector-emitter saturation voltage VCEsat = f (IC) hFE = 10
Transition frequency fT = f (IC)
Semiconductor Group
5

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